mp03tt300 1/10 www.dynexsemi.com features dual device module electrically isolated package pressure contact construction international standard footprint alumina (non toxic) isolation medium integral water cooled heatsink applications motor control controlled rectifier bridges heater control ac phase control voltage ratings ordering information order as: mp03tt300-xx w1 with 1/4 bsp connection mp03tt300-xx w2 1/4 ?18 npt connection mp03tt300-xx w3 1/4 ?18 npt connection mp03tt300-xx w3a 1/4 ?18 npt water connection thread mp03tt300-xx w4 with 1/4 bsp connection xx shown in the part number about represents v drm /100 selection required, e.g. mp03tt300-16-w3 note: when ordering, please use the whole part number. auxiliary gate and cathode leads can be ordered separately. key parameters v drm 1800v i t(av) 310a i tsm(per arm) 8100a i t(rms) 490a v isol 3000v mp03tt300 dual thyristor water cooled module preliminary information ds5428-1.1 june 2001 1800 1700 1600 1500 mp03tt300-18 mp03tt300-17 mp03tt300-16 mp03tt300-15 conditions t vj = 0? to 125?c, i drm = i rrm = 30ma v dsm = v rsm = v drm = v rrm + 100v respectively lower voltage grades available type number repetitive peak voltages v drm v rrm v fig. 1 circuit diagram fig. 2 electrical connections - (not to scale) (see package details for further information) g 1 k 1 k 2 g 2 1 23 outline type code: mp03 - w1 or w2 outline type code: mp03 - w3 or w4 outline type code: mp03 - w3a
mp03tt300 2/10 www.dynexsemi.com test conditions half wave resistive load, t water (in) = 25 ? c 4.5 ltr/min t water (in) = 40 ? c t water (in) = 50 ? c t water (in) = 25 ? c @ 4.5 ltr/min t water (in) = 40 ? c @ 4.5 ltr/min 10ms half sine, t j = 125 ? c v r = 0 10ms half sine, t j = 125 ? c v r = 50% v drm commoned terminals to base plate. ac rms, 1 min, 50hz symbol i t(av) i t(rms i tsm i 2 t i tsm i 2 t v isol units a a a a a ka a 2 s ka a 2 s v max. 360 310 280 565 490 8.1 0.33x10 6 6.5 0.21x10 6 3000 test conditions dc, 4.5 ltr/min half wave, 4.5 ltr/min 3 phase, 4.5 ltr/min reverse (blocking) - mounting - m6 electrical connections - m4 - parameter thermal resistance - junction to water (per thyristor) virtual junction temperature storage temperature range screw torque weight (nominal) thermal and mechanical ratings absolute maximum ratings - per arm stresses above those listed under 'absolute maximum ratings' may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. parameter mean on-state current rms value surge (non-repetitive) on-current i 2 t for fusing surge (non-repetitive) on-current i 2 t for fusing isolation voltage symbol r th(j-w) t vj t stg - - units ? c/kw ? c/kw ? c/kw ? c ? c nm (lb.ins) nm (lb.ins) g max. 0.175 0.185 0.195 125 125 - 9(80) refer to drawing min. - - - - 40 5(44) 8(70 -
mp03tt300 3/10 www.dynexsemi.com units ma v/ s a/ s v m ? test conditions at v rrm /v drm , t j = 125 ? c to 67% v drm , t j = 125 ? c from 67% v drm to 500a, gate source 10v, 5 ? t r = 0.5 s, t j = 125 ? c at t vj = 125 ? c at t vj = 125 ? c parameter peak reverse and off-state current linear rate of rise of off-state voltage rate of rise of on-state current threshold voltage on-state slope resistance dynamic characteristics symbol i rrm /i drm dv/dt di/dt v t(to) r t max. 30 1000 500 0.93 0.67 min. - - - - - parameter gate trigger voltage gate trigger current gate non-trigger voltage peak forward gate voltage peak forward gate voltage peak reverse gate voltage peak forward gate current peak gate power mean gate power test conditions v drm = 5v, t case = 25 o c v drm = 5v, t case = 25 o c at v drm t case = 125 o c anode positive with respect to cathode anode negative with respect to cathode - anode positive with respect to cathode see table fig. 5 - symbol v gt i gt v gd v fgm v fgn v rgm i fgm p gm p g(av) gate trigger characteristics and ratings max. 3 150 0.25 30 0.25 5 10 100 5 units v ma v v v v a w w note: the data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.
mp03tt300 4/10 www.dynexsemi.com fig. 6 transient thermal impedance - dc fig. 3 maximum (limit) on-state characteristics fig. 4 surge (non-repetitive) on-state current vs time (with 50% v rsm at t case = 125?c) fig. 5 gate characteristics 0.5 1.0 1.5 2.0 instantaneous on-state voltage, v t - (v) 0 400 800 1200 1600 measured under pulse conditions instantaneous on-state current, i t - (a) 200 600 1000 1400 t j = 125 ? c 20 15 10 5 0 peak half sine wave on-state current - (ka) 11012345 50 ms cycles at 50hz duration 150 200 250 300 i 2 t value - (a 2 s x 10 3 ) i 2 t i 2 t = 2 x t 2 10 1 0.1 0.01 0.001 gate trigger current, i gt - (a) 100 10 1 0.1 gate trigger voltage, v gt - (v) 100 w 50w 20w 10w 5w region of certain triggering upper l imit 95% lo wer limit 5% t j = 125 ? c t j = 25 ? c t j = -40 ? c v gd table gives pulse power p gm in watts pulse width s 20 25 100 500 1ms 10ms frequency hz 50 100 100 100 100 100 10 100 100 100 100 100 50 - 400 100 100 100 25 12.5 - 10 1 0.1 1000 100 0.01 0.001 time - (s) 1.0 0.1 0.01 0.001 thermal resistance (junction to water). r th(j-w) - ( ? c/w)
mp03tt300 5/10 www.dynexsemi.com fig. 7 on-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60hz fig. 8 on-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60hz fig. 9 maximum permissible water inlet temperature vs on-state current at specified conduction angles, sine wave 50/60hz fig. 10 maximum permissible water inlet temperature vs on-state current at specified conduction angles, square wave 50/60hz 0 200 400 600 800 mean on-state current, i t(av) - (a) 0 400 800 1200 1800 on-state power loss per device - (w) 200 600 1000 1400 1600 conduction angle 30 ? 60 ? 90 ? 180 ? 120 ? 0 200 400 600 800 mean on-state current, i t(av) - (a) 0 200 400 600 1200 on-state power loss per device - (w) 100 300 500 700 900 800 1000 1100 conduction angle 30 ? 60 ? dc 90 ? 180 ? 120 ? 0 100 200 300 400 500 mean on-state current, i t(av) - (a) 0 20 40 60 120 max. permissible water inlet temperature - ( ? c @ 4.5 l/min) 10 30 50 70 90 80 110 100 60 ? 90 ? 180 ? 120 ? conduction angle 30 ? 0 100 200 300 400 500 mean on-state current, i t(av) - (a) 0 20 40 60 120 max. permissible water inlet temperature - ( ? c @ 4.5 l/min) 10 30 50 70 90 80 110 100 60 ? 90 ? 180 ? dc 120 ? conduction angle 30 ?
mp03tt300 6/10 www.dynexsemi.com fig. 11 50/60hz single phase bridge dc output current vs power loss and maximum permissible water inlet temperature for specified values of heatsink thermal resistance fig. 12 fig. 11 50/60hz three phase bridge dc output current vs power loss and maximum permissible water inlet temperature for specified values of heatsink thermal resistance 0 20 40 60 80 100 120 140 0 1000 max. water inlet temperature - ( ? c) dc output current - (a) 0 400 800 1200 2400 total power loss - (w) 200 600 1000 1400 1800 1600 2200 2000 100 200 300 400 500 600 700 800 900 resistive load inductive load 0 20 40 60 80 100 120 140 0 1000 max. water inlet temperature - ( ? c) dc output current - (a) 0 400 800 1200 2400 total power loss - (w) 200 600 1000 1400 1800 1600 2200 2000 100 200 300 400 500 600 700 800 900 resistive load or inductive load
mp03tt300 7/10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. recommended fixings for mounting: m5 socket head cap screws nominal weight: 1100g auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately. module outline type code: mp03-w1 and w2 28.5 5 6.5 5 5 35 38 41 50 18 42.5 5.5 m8 80 92 fast on tabs 2.8 x 0.8 g 1 k 1 k 2 g 2 1 2 3 61 25 19 27.5 37 thread size: w1 : 1/4 bsp connection w2 : 1/4 18 npt connection
mp03tt300 8/10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. recommended fixings for mounting: m5 socket head cap screws nominal weight: 1100g auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately. module outline type code: mp03-w3 and w4 28.5 5 6.5 5 5 35 38 41 50 18 42.5 5.5 m8 80 92 fast on tabs 2.8 x 0.8 g 1 k 1 k 2 g 2 1 2 3 9 61 19 27.5 37 thread size: w3 : 1/4 18 npt connection w4 : 1/4 bsp connection
mp03tt300 9/10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. recommended fixings for mounting: m5 socket head cap screws nominal weight: 1300g auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately. module outline type code: mp03-w3a 28.5 5 6.5 5 5 35 38 47.4 50 18 42.5 5.5 m8 80 92 fast on tabs 2.8 x 0.8 g 1 k 1 k 2 g 2 1 2 3 10.37 67.4 25.4 20.6 50.8 thread size: w3a : 1/4 18 npt connection thread
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (613) 723-7035. fax: (613) 723-1518. toll free: 1.888.33.dynex (39639) / tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2002 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.
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